AI NewsWaveSK hynix President Ahn Hyun: Final HBF Specification to Be Set in January
Key points
- Final HBF specification set for January next year
- Developing 3D stacked DRAM beyond HBM
- Aims to ease AI inference memory bottleneck
SK hynix will release the final specification in January next year for high bandwidth flash (HBF), which it is developing as the next-generation AI memory after high bandwidth memory (HBM). President Ahn Hyun, chief development officer (CDO), said so in a keynote at Semicon Korea (SEDEX) 2026 at COEX in Seoul on the 14th, The Elec reported.
Ahn stressed the development of next-generation memory such as three-dimensional stacked DRAM and HBF, going beyond HBM. iNews24 and IT Chosun reported that the aim is to resolve the AI memory bottleneck with these technologies. According to IT Chosun, HBF is a product that increases capacity tenfold compared with HBM.
EBN explained that, as the AI inference market grows rapidly, the strategy is to optimize the entire memory hierarchy rather than the performance of individual memory products. Chosun Biz reported that "3D stack DRAM," which stacks DRAM directly on top of a GPU, and custom HBM for customers were also mentioned, and Techworld News reported that next-generation technologies such as CXL were also raised.